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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA754 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -50V(Min) *Low Collector Saturation Voltage: VCE(sat)= -1.3V(Max.) @ IC= -1.5A *Good Linearity of hFE APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage ww w PARAMETER scs .i VALUE -50 -50 -4 -2 20 UNIT .cn mi e V V V A VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Total Power Dissipation@ TC=25 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA754 MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -50 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A B -1.3 V VBE(on) Collector-Emitter On Voltage IC= -1A; VCE= -4V ICBO Collector Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product w w C 100-200 scs .i w VCB= -20V; IE= 0 IC= -1A; VCE= -4V .cn mi e 35 35 50 -1.5 V -100 A 200 IC= -0.1A; VCE= -4V IC= -0.5A; VCE= -4V MHz hFE-1 Classifications A 35-70 B 50-120 isc Websitewww.iscsemi.cn 2 |
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